Infineon IAUZ30N10S5L240: A 100V Single N-Channel MOSFET Engineered for Demanding Automotive and Industrial Applications

The relentless push for higher efficiency, robustness, and miniaturization in power electronics has placed advanced semiconductor components at the forefront of design innovation. Addressing these needs, the Infineon IAUZ30N10S5L240 stands out as a high-performance 100V single N-channel MOSFET, specifically engineered to excel in the harsh environments of automotive and industrial systems.

This MOSFET is built using Infineon's proprietary OptiMOS™ 5 power technology, a cornerstone of its impressive performance profile. This technology enables the device to achieve an exceptionally low typical on-state resistance (R DS(on)) of just 3.0 mΩ at 10 V. This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for smaller form factors due to less demanding cooling requirements.

The IAUZ30N10S5L240 is AEC-Q101 qualified, a vital benchmark for components destined for automotive applications. This certification ensures the device's reliability and durability under the extreme conditions typical of vehicles, including wide temperature fluctuations, high humidity, and intense vibration. It is perfectly suited for a wide array of automotive loads, such as brushed DC motor control (e.g., in power windows, sunroofs, and seats), solenoid and valve drivers, and other body electronics and power distribution systems.

In the industrial sphere, this MOSFET brings the same benefits of efficiency and reliability to high-power switch-mode power supplies (SMPS), battery management systems (BMS), motor drives, and general purpose switching circuits. Its 100V drain-source voltage (V DS) rating provides a comfortable margin for 48V bus systems, ensuring stable and safe operation. Furthermore, the device features low gate charge (Q G) and exceptional switching performance, which are paramount for achieving high switching frequencies in modern power converters, leading to further reductions in the size of passive components like inductors and capacitors.

Housed in a SuperSO8 package (PG-TSDSON-8), the IAUZ30N10S5L240 offers an optimal balance between superior thermal performance and a compact PCB footprint. This package is designed to effectively dissipate heat, allowing the MOSFET to handle high continuous and pulsed currents without compromising performance or longevity.

ICGOOODFIND: The Infineon IAUZ30N10S5L240 is a superior choice for designers seeking to enhance power efficiency and reliability. Its combination of ultra-low R DS(on) via OptiMOS™ 5 technology, AEC-Q101 qualification for automotive use, a high-power-density SuperSO8 package, and robust 100V capability makes it an exceptionally versatile and high-performance solution for the most demanding automotive and industrial power applications.

Keywords: OptiMOS™ 5, Low R DS(on), AEC-Q101 Qualified, Automotive Applications, SuperSO8 Package.