**HMC966LP4ETR: A High-Performance InGaP HBT Gain Block Amplifier for Broadband Applications from DC to 14 GHz**
The relentless drive for higher data rates and wider bandwidths in modern communication, radar, and test & measurement systems places immense demands on RF component performance. **Amid this challenge, the HMC966LP4ETR emerges as a premier solution**, a gain block amplifier engineered to deliver exceptional linearity, gain, and stability across an ultra-broad frequency spectrum.
Fabricated on a high-reliability **Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT)** process, this amplifier sets a high bar for performance. The InGaP HBT technology is renowned for its superior breakdown voltage, excellent linearity, and high power density compared to traditional silicon or GaAs MESFET alternatives. This foundation enables the HMC966LP4ETR to achieve a remarkably flat **gain of 16.5 dB from DC to 14 GHz**, making it an ideal candidate for both narrowband and wideband applications without requiring complex gain-equalization circuits.
A key strength of this component is its impressive linearity. It boasts an output third-order intercept point (OIP3) of +33 dBm and a output 1 dB compression point (P1dB) of +20 dBm at 10 GHz. **This high OIP3 ensures minimal distortion**, which is absolutely critical for maintaining signal integrity in densely modulated systems such as 5G infrastructure, microwave backhaul, and electronic warfare platforms. Furthermore, the amplifier operates from a single positive supply ranging from +4V to +6V, drawing a nominal current of 80 mA, which simplifies power supply design.
Housed in a compact, RoHS-compliant 4x4 mm QFN leadless package, the HMC966LP4ETR is designed for ease of integration into high-density circuit boards. **Its internal matching networks are optimized for broadband operation**, effectively presenting 50-ohm impedances at both input and output ports. This design significantly reduces the need for external matching components, saving valuable board space and streamlining the design-in process. The device also exhibits excellent thermal performance due to an exposed paddle that provides a low impedance path for heat dissipation.
Applications for this versatile amplifier are extensive. It is perfectly suited to serve as a **driver amplifier for high-speed DACs or ADCs**, a gain stage in frequency converter blocks (LO/mixer chains), and a general-purpose signal booster in instrumentation and aerospace systems. Its operation from DC also makes it valuable for baseband and pulse applications.
**ICGOOODFIND**: The HMC966LP4ETR stands out as a superior gain block amplifier, leveraging advanced InGaP HBT technology to deliver high gain, exceptional linearity, and robust broadband performance from DC to 14 GHz. Its internally matched design and compact package make it an indispensable component for designers tackling the challenges of next-generation RF systems.
**Keywords**: **InGaP HBT**, **Broadband Amplifier**, **High Linearity**, **Gain Block**, **DC to 14 GHz**
