Infineon BFR193E6327HTSA1 NPN RF Transistor: Datasheet, Application Notes, and Sourcing Guide
The Infineon BFR193E6327HTSA1 stands as a high-performance NPN silicon germanium (SiGe) heterojunction bipolar transistor (HBT) engineered for RF amplifier applications across a wide frequency spectrum. Packaged in the compact, surface-mount SOT-343 (SC-70), this transistor is a cornerstone component for designers working in the microwave frequency range, particularly from 1 GHz up to 12 GHz and beyond. Its primary function is to provide low-noise amplification in the initial stages of a receiver chain or to serve as a general-purpose gain block in various transmitting and receiving circuits.
Datasheet Overview: Key Specifications
A thorough review of the official datasheet is critical for successful circuit integration. Key parameters that define the BFR193E6327HTSA1 include:
Transition Frequency (fT): A remarkable 12 GHz, indicating its suitability for high-frequency operation.
Noise Figure (NF): Typically 1.4 dB at 2 GHz (2 mA, VCE=2V), making it an excellent choice for low-noise amplifier (LNA) stages where signal integrity is paramount.
Gain: Offers a high power gain (|S21|²) of around 17.5 dB at 2 GHz, ensuring significant signal amplification.
Collector-Emitter Voltage (VCEO): 12 V, defining the upper limit of its operating voltage.
Collector Current (IC): A continuous collector current of 50 mA, with an optimal linearity and noise performance typically achieved between 2 mA and 10 mA.
Application Notes: Bringing the Transistor to Life
The BFR193E6327HTSA1 excels in a variety of RF scenarios. Here are some primary applications:
Cellular Infrastructure: Used in LNA circuits for base stations and repeaters operating in bands from 900 MHz to 3.5 GHz.
GPS and Satellite Communication: Its low-noise characteristics are ideal for receiving weak signals from satellites.
Wireless Data Links: A key component in point-to-point and point-to-multipoint radio links, including ISM band applications.
Driver Amplifier Stages: Can be effectively used to drive higher-power amplifiers in a transmitter path.
For stable operation, careful PCB layout is essential. Designers must employ RF design principles: use a continuous ground plane, minimize lead lengths, implement proper impedance matching (often to 50 Ω) using microstrip lines and matching networks, and utilize effective RF bypassing and decoupling at both supply and bias lines to prevent unwanted oscillations.
Sourcing Guide: Ensuring Authenticity and Availability
As a widely used component, the BFR193E6327HTSA1 is stocked by major global distributors. However, to mitigate supply chain risks:
Authorized Distributors: Always prioritize sourcing from Infineon-authorized distributors to guarantee component authenticity and reliability.
Alternatives: In case of shortages, consult distributor cross-reference tools or Infineon’s product portfolio for potential alternatives (e.g., other transistors in the BFR19x series) that meet your electrical and physical requirements.
Batch Consistency: For production runs, ensure components are from the same manufacturing lot to maintain performance consistency across all units.
ICGOODFIND: For engineers and procurement specialists, the BFR193E6327HTSA1 represents a optimal blend of high-frequency performance, low-noise amplification, and miniaturized packaging. Its well-documented characteristics make it a reliable and versatile choice for advancing modern RF and microwave communication systems, from 5G infrastructure to satellite receivers.
Keywords:
1. NPN RF Transistor
2. Low-Noise Amplifier (LNA)
3. Silicon Germanium (SiGe)
4. Microwave Frequency
5. SOT-343 Package
