Infineon IPD100N04S402ATMA1: High-Performance 100V OptiMOS Power MOSFET

In the relentless pursuit of higher efficiency and power density across various electronic applications, from advanced computing to automotive systems, the choice of power semiconductor is paramount. The Infineon IPD100N04S402ATMA1 stands out as a premier solution, a 100V N-channel power MOSFET engineered to deliver exceptional performance and reliability in a compact, thermally efficient package.

This device is a part of Infineon's esteemed OptiMOS™ power MOSFET family, renowned for its benchmark-setting performance. The IPD100N04S402ATMA1 is specifically designed to minimize power losses, a critical factor for enhancing overall system efficiency. It boasts an ultra-low typical on-state resistance (R DS(on)) of just 2.0 mΩ at 10 V, which directly translates to reduced conduction losses. This allows for more current to be handled with less energy wasted as heat, enabling cooler operation and potentially reducing the size and cost of associated heat sinks.

Furthermore, the MOSFET features outstanding switching characteristics. The low gate charge (Q G) and figures of merit (FOM) ensure swift switching transitions, which are essential for high-frequency operation in switch-mode power supplies (SMPS), motor drives, and DC-DC converters. This capability not only improves efficiency but also allows designers to use smaller passive components, pushing the boundaries of power density.

Housed in the robust SuperSO8 (SSO-8) package, this component offers a superior thermal performance compared to standard SO-8 packages. The exposed pad facilitates efficient heat dissipation, ensuring the junction temperature remains within safe limits even under demanding load conditions. This rugged construction, combined with a high maximum current rating (I D continuous of 100A), makes it exceptionally suited for demanding automotive and industrial environments.

A key application highlight is its use in synchronous rectification circuits within server and telecom power supplies, where every percentage point of efficiency is crucial. It is also an ideal candidate for managing high currents in battery protection modules, motor control units, and high-performance computing systems.

ICGOOFind Summary:

The Infineon IPD100N04S402ATMA1 is a top-tier 100V OptiMOS™ power MOSFET that sets a high standard for efficiency and power density. Its combination of an ultra-low R DS(on), excellent switching performance, and robust thermal package makes it an indispensable component for designers aiming to create next-generation, high-efficiency power electronics for automotive, industrial, and computing applications.

Keywords:

Power Efficiency

OptiMOS Technology

Low RDS(on)

SuperSO8 Package

Synchronous Rectification